The identification, characterization and mitigation of defect states in organic photovoltaic devices: a review and outlook

被引:143
作者
Carr, John A. [1 ]
Chaudhary, Sumit [1 ]
机构
[1] Iowa State Univ, Dept Elect & Comp Engn, Ames, IA 50011 USA
基金
美国国家科学基金会;
关键词
CHARGE-LIMITED-CURRENTS; HYDROGENATED AMORPHOUS-SILICON; LEVEL TRANSIENT SPECTROSCOPY; A-SI-H; SOLAR-CELLS; CONJUGATED POLYMERS; THIN-FILM; PALLADIUM NANOPARTICLES; BULK HETEROJUNCTIONS; TRAP DISTRIBUTIONS;
D O I
10.1039/c3ee41860j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In any microelectronic device, fundamental physical parameters must be well understood for successful electronic optimization. One such prominent parameter is energetic trap states, which are well-known to plague amorphous or otherwise impure semiconducting materials. Organic semiconductors are no strangers to such states and their electronic properties are evidently tied to these defects. Herein, this article discusses the identification, characterization and mitigation of bandgap residing trap levels in organic photovoltaic devices. A compilation of select studies to date is given and a general outlook is proposed. Organic photovoltaic materials are depicted as multiple trap-level systems with a seemingly continuous distribution of electronic states throughout the bandgap. Some elucidations as to the origins of these electronic states as well as recent works centered on defect removal are also presented.
引用
收藏
页码:3414 / 3438
页数:25
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