Study of the hydrogenation mechanism by rapid thermal anneal of SiN: H in thin-film polycrystalline-silicon solar cells

被引：19

作者：

Carnel, L ^{[1
]}

Dekkers, HFW ^{[1
]}

Gordon, I ^{[1
]}

Van Gestel, D ^{[1
]}

Van Nieuwenhuysen, K ^{[1
]}

Beallcarne, G ^{[1
]}

Poortmans, J ^{[1
]}

机构：

[1] IMEC, B-3001 Heverlee, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 03期

关键词：

hydrogenation; polycrystalline-silicon (pc-Si); solar cells;

D O I：

10.1109/LED.2005.863566

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A considerable cost reduction in photovoltaics could be achieved if efficient solar cells could be made from thin polycrystalline-silicon (pc-Si) films. Although hydrogen passivation of pc-Si films is crucial to obtain good solar cells, the exact mechanism of hydrogen diffusion through pc-Si layers is not yet understood. In this letter, the influence of the junction and the grain size are investigated. We find that the presence of a p-n junction acts as a barrier for hydrogen diffusion in thin-film polysilicon solar cells. Therefore, pc-Si solar cells should preferably be passivated before Junction formation. Furthermore, pc-Si layers with large grains retain less hydrogen after passivation than layers with small grains. This indicates that hydrogen atoms get mainly trapped at the grain boundaries.

引用

页码：163 / 165

页数：3

共 9 条

[1] Thin-film polycrystalline Si solar cells on foreign substrates:: film formation at intermediate temperatures (700-1300 °C) [J].