Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's

被引：16

作者：

Chor, EF

Malik, RJ

Hamm, RA

Ryan, R

机构：

[1] AT and T Bell Laboratories, Murray Hill

[2] Department of Electrical Engineering, National University of Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 02期

关键词：

D O I：

10.1109/55.484124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The metallurgical stability of ohmic contacts: Pt, Pt/Ti, Au/Ti, Au/Pt/Ti, and Au/Pt/Ti/W, on a 500 Angstrom thick p(+)-InGaAs base of InP/InGaAs/InP HBT's have been investigated as a function of anneal temperature, All contacts were stable after a 300 degrees C-30 s anneal, Pt contact failed at 350 degrees C whereas Pt/Ti, Au/Ti, and Au/Pt/Ti contacts failed at 400 degrees C, The failure mechanism was a collector leakage short owing to the penetration of Pt or Ti through the thin base, Only HBT's with Au/Pt/Ti/W contact were still functional after a 400 degrees C anneal with no apparent shift in the turn-on voltage for the emitter and collector junctions.

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页码：62 / 64

页数：3

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