PT/TI/P-IN0.53GA0.47AS LOW-RESISTANCE NONALLOYED OHMIC CONTACT FORMED BY RAPID THERMAL-PROCESSING

被引：48

作者：

KATZ, A ^{[1
]}

DAUTREMONTSMITH, WC ^{[1
]}

CHU, SNG ^{[1
]}

THOMAS, PM ^{[1
]}

KOSZI, LA ^{[1
]}

LEE, JW ^{[1
]}

RIGGS, VG ^{[1
]}

BROWN, RL ^{[1
]}

NAPHOLTZ, SG ^{[1
]}

ZILKO, JL ^{[1
]}

LAHAV, A ^{[1
]}

机构：

[1] AT&T BELL LABS, READING, PA 19604 USA

来源：

关键词：

D O I：

10.1063/1.101110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2306 / 2308

页数：3

共 18 条

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KATZ, A
DAUTREMONTSMITH, WC
THOMAS, PM
KOSZI, LA
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RIGGS, VG
BROWN, RL
ZILKO, JL
LAHAV, A
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (11) : 4319 - 4323
[7] KAUMANS R, 1988, 14TH P C GAAS REL CO, V4, P501
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[9] MEAD CA, 1964, PHYS REV A, V134, P173
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