Stability of an amorphous silicon oscillator

被引：4

作者：

Bae, BS ^{[1
]}

Choi, JW ^{[1
]}

Kim, SH ^{[1
]}

Oh, JH ^{[1
]}

Jang, J ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Informat Display, Seoul, South Korea

来源：

ETRI JOURNAL | 2006年 / 28卷 / 01期

关键词：

amorphous silicon; thin film transistors; integrated circuits; RFID; oscillator;

D O I：

10.4218/etrij.06.0105.0104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An RC oscillator using amorphous silicon thin film transistors was developed. The oscillation frequency and its dependence on resistance and bias voltage were studied. The frequency was controlled by adjusting the feedback resistance of the oscillator. The highest measured frequency of the oscillator was around 140 kHz, which is acceptable for low-end radio frequency identification (RFID). Since a low-end RFID circuit needs low cost and a simple process, an amorphous silicon oscillator is suitable.

引用

页码：45 / 50

页数：6

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