Hydrogenated amorphous silicon thin-film transistor with a thin gate insulator

被引：12

作者：

Choi, YJ ^{[1
]}

Kwak, WK ^{[1
]}

Cho, KS ^{[1
]}

Kim, SK ^{[1
]}

Jang, J ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 01期

关键词：

a-Si TFT's; insulators;

D O I：

10.1109/55.817439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tinning the gate insulator in a hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) has been studied in coplanar structure. The threshold voltage decreases with decreasing gate insulator thickness without changing the field effect mobility significantly. The reduction in the threshold voltage is due to the decrease in the charge traps in the SiNx and in its film thickness. The coplanar a-Si:H TFT with a gate insulator thickness of 35 nm exhibited a field effect mobility of 0.45 cm(2)/Vs and a threshold voltage of 1.5 V. The thickness of the gate insulator can be decreased in the coplanar a-Si : H TFT's because of the planarized gate insulator.

引用

页码：18 / 20

页数：3

共 8 条

[1]

AKIYAMA M, 1991, SID, V20

[2] Short-channel amorphous-silicon thin-film transistors [J].