Short-channel amorphous-silicon thin-film transistors

被引：19

作者：

Kim, CD ^{[1
]}

Matsumura, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,FAC ENGN,DEPT PHYS ELECT,TOKYO 152,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 12期

关键词：

D O I：

10.1109/16.544388

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Amorphous-silicon thin-film transistors (TFT's) with submicrometer-long bottom-gate have been fabricated and their characteristics were evaluated. By the desirable effects of highly conductive source and drain of excimer-laser crystallized Si film, the mobility was hardly decreased from about 1.0 cm(2)/Vs for the 15-mu m long TFT to about 0.9 cm(2)/Vs for the 0.5-mu m long TFT, Detailed effects of the gate electrode thickness and length have been discussed on the TFT characteristics.

引用

页码：2172 / 2176

页数：5

共 12 条

[1] HOT-WALL CHEMICAL-VAPOR-DEPOSITION OF AMORPHOUS-SILICON AND ITS APPLICATION TO THIN-FILM TRANSISTORS [J].

AHN, BC ;

SHIMIZU, K ;

SATOH, T ;

KANOH, H ;

SUGIURA, O ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B) :3695-3699

[2] SELF-ALIGNED BOTTOM-GATE SUBMICROMETER-CHANNEL-LENGTH A-SI-H THIN-FILM TRANSISTORS [J].

BUSTA, HH ;

POGEMILLER, JE ;

STANDLEY, RW ;

MACKENZIE, KD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (12) :2883-2888

[3] SIMULATIONS AND PHYSICS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

HACK, M ;

SHAW, JG ;

SHUR, M .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 115 (1-3) :150-155

[4] PHYSICAL MODELS FOR AMORPHOUS-SILICON THIN-FILM TRANSISTORS AND THEIR IMPLEMENTATION IN A CIRCUIT SIMULATION PROGRAM [J].

HACK, M ;

SHUR, MS ;

SHAW, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (12) :2764-2769

[5] TWO-DIMENSIONAL NUMERICAL-ANALYSIS OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS [J].

HIROSE, N ;

UCHIDA, Y ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (02) :200-207

[6]

KIM CD, 1993, MATER RES SOC SYMP P, V297, P925, DOI 10.1557/PROC-297-925

[7]

KIM CD, 1994, IEEE T ELECTRON DEV, V42, P1614

[8] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J].

OGURA, S ;

TSANG, PJ ;

WALKER, WW ;

CRITCHLOW, DL ;

SHEPARD, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1359-1367

[9] SIMULATIONS OF SHORT-CHANNEL AND OVERLAP EFFECTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

SHAW, JG ;

HACK, M .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (05) :2124-2129

[10] A NOVEL POST-HYDROGENATION PROCESS FOR CHEMICAL-VAPOR-DEPOSITED A-SI THIN-FILM TRANSISTORS [J].

SUGIURA, O ;

SHIRAIWA, T ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (7B) :L981-L983

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