HOT-WALL CHEMICAL-VAPOR-DEPOSITION OF AMORPHOUS-SILICON AND ITS APPLICATION TO THIN-FILM TRANSISTORS

被引：22

作者：

AHN, BC

SHIMIZU, K

SATOH, T

KANOH, H

SUGIURA, O

MATSUMURA, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; THIN-FILM TRANSISTORS; BATCH PROCESS; HOT-WALL CVD; HIGHER SILANES;

D O I：

10.1143/JJAP.30.3695

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hot-wall chemical vapor deposition of amorphous-silicon has been investigated, aiming at a batch process for thin-film transistors (TFTs). High-performance TFTs (mobility = 1.7 cm2/Vs, threshold voltage = 9 V and subthreshold voltage swing = 0.8 V/decade) have been successfully fabricated. Similar good TFT characteristics were obtained over a wide range of a-Si deposition conditions.

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收藏

页码：3695 / 3699

页数：5

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