SIMULATIONS AND PHYSICS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS

被引：3

作者：

HACK, M ^{[1
]}

SHAW, JG ^{[1
]}

SHUR, M ^{[1
]}

机构：

[1] UNIV VIRGINIA,DEPT ELECT ENGN,CHARLOTTESVILLE,VA 22901

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 115卷 / 1-3期

关键词：

D O I：

10.1016/0022-3093(89)90389-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：150 / 155

页数：6

共 12 条

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[4]

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[5] THE EFFECT OF SURFACE-STATES AND FIXED CHARGE ON THE FIELD-EFFECT CONDUCTANCE OF AMORPHOUS-SILICON [J].

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PRITCHARD, J .

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[6] SIMULATIONS OF SHORT-CHANNEL AND OVERLAP EFFECTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

SHAW, JG ;

HACK, M .

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[7] AN ANALYTIC MODEL FOR CALCULATING TRAPPED CHARGE IN AMORPHOUS-SILICON [J].

SHAW, JG ;

HACK, M .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) :4562-4566

[8] META-STABLE CHANGES IN THE OUTPUT CHARACTERISTICS OF HIGH-VOLTAGE AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

SHAW, JG ;

HACK, M ;

MARTIN, RA .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 115 (1-3) :141-143

[9]

SHAW JG, 1985, MANIFEST USERS GUIDE

[10] NEW HIGH FIELD-EFFECT MOBILITY REGIMES OF AMORPHOUS-SILICON ALLOY THIN-FILM TRANSISTOR OPERATION [J].

SHUR, M ;

HYUN, C .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) :2488-2497

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