A NOVEL POST-HYDROGENATION PROCESS FOR CHEMICAL-VAPOR-DEPOSITED A-SI THIN-FILM TRANSISTORS

被引：7

作者：

SUGIURA, O

SHIRAIWA, T

MATSUMURA, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Tokyo, 152

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 7B期

关键词：

AMORPHOUS SILICON; POST-HYDROGENATION METHOD; THIN-FILM TRANSISTOR; TUNGSTEN FILAMENT; ATOMIC HYDROGEN;

D O I：

10.1143/JJAP.32.L981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel post-hydrogenation method for chemical-vapor-deposited amorphous-silicon (CVD a-Si) thin-film transistors (TFTs) has been proposed. Samples were annealed in the presence of the atomic hydrogen generated by a hot tungsten filament. The dependence of the amount of adsorbed hydrogen on annealing period, filament temperature and total gas pressure was described. A-Si TFTs which were post-hydrogenated by means of the hot-filament method showed an electron mobility of 1.1 cm2/V . s. The lifetime and diffusion length of atomic hydrogen were estimated.

引用

页码：L981 / L983

页数：3

共 6 条

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