HYDROGEN-RADICAL ANNEALING OF CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON FILMS

被引：20

作者：

UCHIDA, Y ^{[1
]}

KANOH, H ^{[1
]}

SUGIURA, O ^{[1
]}

MATSUMURA, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL, DEPT PHYS ELECTR, MEGURO KU, TOKYO 152, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 12期

关键词：

AMORPHOUS SILICON; HYDROGEN-RADICAL ANNEALING; PHOTOCONDUCTOR; TFT; MOBILITY;

D O I：

10.1143/JJAP.29.L2171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter describes that photogenerated hydrogen-radical annealing (HRA) is very effective for improving the electric properties of chemical-vapor-deposited amorphous silicon films. The ratio of photoconductivity to dark conductivity (at a light intensity of 100 mW/cm2) changed from 100 to 6 X 10(4) upon annealing in a hydrogen-radical-rich ambient at 280-degrees-C. Thin-film transistor (TFT) characteristics were also improved by HRA.

引用

页码：L2171 / L2173

页数：3

共 8 条

[1] A-SI-H TFTS USING LOW-TEMPERATURE CVD OF SI3H8 [J].

BREDDELS, PA ;

KANOH, H ;

SUGIURA, O ;

MATSUMURA, M .

ELECTRONICS LETTERS, 1989, 25 (24) :1637-1638

[2] AMORPHOUS-SILICON THIN-FILM TRANSISTORS USING CHEMICAL VAPOR-DEPOSITION OF DISILANE [J].

BREDDELS, PA ;

KANOH, H ;

SUGIURA, O ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (10) :L1750-L1752

[3] AMORPHOUS-SILICON SILICON-NITRIDE THIN-FILM TRANSISTORS FABRICATED BY PLASMA-FREE (CHEMICAL VAPOR-DEPOSITION) METHOD [J].

KANOH, H ;

SUGIURA, O ;

BREDDELS, PA ;

MATSUMURA, M .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (06) :258-260

[4] SILICON THIN-FILM FORMATION BY DIRECT PHOTOCHEMICAL DECOMPOSITION OF DISILANE [J].

MISHIMA, Y ;

HIROSE, M ;

OSAKA, Y ;

NAGAMINE, K ;

ASHIDA, Y ;

KITAGAWA, N ;

ISOGAYA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (01) :L46-L48

[5] GAP STATES AND ELECTRON-SPIN-RESONANCE OF BORON-DOPED CVD AMORPHOUS-SILICON [J].

NAKASHITA, T ;

HIROSE, M ;

OSAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) :471-475

[6] 3P1 MERCURY-PHOTOSENSITIZED DECOMPOSITION OF MONOSILANE [J].

NIKI, H ;

MAINS, GJ .

JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (02) :304-&

[7] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].

STAEBLER, DL ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294

[8] FLAT-PANEL DISPLAYS DISPLACE LARGE, HEAVY, POWER-HUNGRY CRTS [J].

TANNAS, LE .

IEEE SPECTRUM, 1989, 26 (09) :34-35

← 1 →