OPTIMIZATION OF CHEMICAL VAPOR-DEPOSITION CONDITIONS OF AMORPHOUS-SILICON FILMS FOR THIN-FILM TRANSISTOR APPLICATION

被引：12

作者：

KANOH, H

SUGIURA, O

BREDDELS, PA

MATSUMURA, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, 0-okayama, Meguro-ku, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 11期

关键词：

AMORPHOUS SILICON; SILICON NITRIDE; THIN-FILM TRANSISTORS; CHEMICAL VAPOR DEPOSITION; TRISILANE; DISILANE; HYDRAZINE;

D O I：

10.1143/JJAP.29.2358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optimum condition has been investigated for chemical vapor deposition (CVD) of amorphous-silicon (a-Si) films to form high-performance a-Si thin-film transistors (TFTs) by a fully plasma-free process. It was found that hydrogen annealings improve the TFT characteristics a great deal and that there is an optimum deposition temperature and gas flow rate. The maximum field-effect mobility of electrons and on/off current-ratio were more than 0.8 cm2V-1s-1 and 10(6), respectively.

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页码：2358 / 2364

页数：7

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