TWO-DIMENSIONAL NUMERICAL-ANALYSIS OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS

被引：13

作者：

HIROSE, N

UCHIDA, Y

MATSUMURA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 02期

关键词：

D O I：

10.1143/JJAP.24.200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：200 / 207

页数：8

共 10 条

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[10] SCHOTTKY-BARRIER CHARACTERISTICS OF METAL-AMORPHOUS-SILICON DIODES [J].

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