Short channel effects in N- and P-channel polycrystalline silicon thin film transistors with very thin electron cyclotron resonance N2O-plasma gate dielectric

To suppress short-channel effects in polysilicon thin film transistors, very thin electron cyclotron resonance(ECR) N2O-plasma gate oxide is investigated experimentally. ECR N2O-plasma oxidation incorporates nitrogen atoms at the interface and forms strong Si=N bonds. With the ECR N2O-plasma oxide of 12 nm thickness, short-channel effects can be almost eliminated for n-channel (p-channel) thin film transistors of 3 mu m (1 mu m) gate length. It is inferred that reduction of defects by NaO-plasma passivation and strong Si=N bonds lead to good immunity to impact ionization, resulting in the suppression of short-channel effects.