Determination of the energy-dependent conduction band mass in SiO2

被引：31

作者：

Ludeke, R

Cartier, E

Schenk, A

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

[2] Swiss Fed Inst Technol, Integrated Syst Lab, CH-8092 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 10期

关键词：

D O I：

10.1063/1.124709

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energy dependence of the conduction band mass in amorphous SiO2 was deduced from quantum interference oscillations in the ballistic electron emission microscope current, and separately from Monte Carlo simulations of the electron mean free paths obtained by internal photoemission. The results imply a strong nonparabolicity of the conduction band of SiO2. (C) 1999 American Institute of Physics. [S0003-6951(99)00836-0].

引用

页码：1407 / 1409

页数：3

共 29 条

[1] CALCULATION OF TRANSMISSION TUNNELING CURRENT ACROSS ARBITRARY POTENTIAL BARRIERS [J].

ANDO, Y ;

ITOH, T .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1497-1502

[2]

Bassani F., 1975, ELECT STATES OPTICAL

[3] HOT-ELECTRON TRANSPORT THROUGH THIN DIELECTRIC FILMS - BOLTZMANN THEORY AND ELECTRON-SPECTROSCOPY [J].

BERNASCONI, J ;

CARTIER, E ;

PFLUGER, P .

PHYSICAL REVIEW B, 1988, 38 (17) :12567-12581

[4] Fabrication of midgap metal gates compatible with ultrathin dielectrics [J].

Buchanan, DA ;

McFeely, FR ;

Yurkas, JJ .

APPLIED PHYSICS LETTERS, 1998, 73 (12) :1676-1678

[5] Characterization of the hot-electron-induced degradation in thin SiO2 gate oxides [J].

Cartier, E .

MICROELECTRONICS AND RELIABILITY, 1998, 38 (02) :201-211

[6] EXPERIMENTAL-DETERMINATION OF ENERGY-DEPENDENT INELASTIC AND ELASTIC-SCATTERING RATES OF HOT-ELECTRONS IN LARGE BANDGAP INSULATORS [J].

CARTIER, E ;

PFLUGER, P .

PHYSICA SCRIPTA, 1988, T23 :235-241

[7] HOT-ELECTRON DYNAMICS IN SIO2 STUDIED BY SOFT-X-RAY-INDUCED CORE-LEVEL PHOTOEMISSION [J].

CARTIER, E ;

MCFEELY, FR .

PHYSICAL REVIEW B, 1991, 44 (19) :10689-10705

[8] ELECTRON-STATES IN ALPHA-QUARTZ - SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION [J].

CHELIKOWSKY, JR ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1977, 15 (08) :4020-4029

[9] Anode hole injection and trapping in silicon dioxide [J].

DiMaria, DJ ;

Cartier, E ;

Buchanan, DA .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (01) :304-317

[10] VACUUM EMISSION OF HOT-ELECTRONS FROM SILICON DIOXIDE AT LOW-TEMPERATURES [J].

DIMARIA, DJ ;

FISCHETTI, MV .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) :4683-4691

← 1 2 3 →