Determination of the energy-dependent conduction band mass in SiO2

被引：31

作者：

Ludeke, R

Cartier, E

Schenk, A

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

[2] Swiss Fed Inst Technol, Integrated Syst Lab, CH-8092 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 10期

关键词：

D O I：

10.1063/1.124709

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energy dependence of the conduction band mass in amorphous SiO2 was deduced from quantum interference oscillations in the ballistic electron emission microscope current, and separately from Monte Carlo simulations of the electron mean free paths obtained by internal photoemission. The results imply a strong nonparabolicity of the conduction band of SiO2. (C) 1999 American Institute of Physics. [S0003-6951(99)00836-0].

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页码：1407 / 1409

页数：3

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