Combinatorial chemical vapor deposition of metal dioxides using anhydrous metal nitrates

被引：27

作者：

Smith, RC

Hoilien, N

Roberts, J

Campbell, SA

Gladfelter, WL

机构：

[1] Univ Minnesota, Dept Chem, Minneapolis, MN 55455 USA

[2] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

来源：

CHEMISTRY OF MATERIALS | 2002年 / 14卷 / 02期

关键词：

D O I：

10.1021/cm011538m

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Modification of a low-pressure CVD reactor and the similar deposition chemistries of Ti(NO3)4, Sn(NO3)4, and Hf(NO3)4 allowed the growth of films on silicon exhibiting a compositional spread of the respective metal dioxides. Electrical measurements of 100 x 100 μm capacitors (shown in the picture) suggest that the dielectric constant of the film can be estimated by a weighted average of the dielectric constants of the individual oxides.

引用

页码：474 / 476

页数：3

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