Combinatorial fabrication process for a-Si:H thin film transistors

被引:8
作者
Aiyer, HN
Nishioka, D
Maruyama, R
Shinno, H
Matsuki, N
Miyazaki, K
Fujioka, H
Koinuma, H
机构
[1] Tokyo Inst Technol, Ceram Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
[3] Waseda Univ, CREST, Japan Sci & Technol Corp, Shinjuku Ku, Tokyo 1690072, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 1AB期
关键词
plasma enhanced chemical vapor deposition; hydrogenated amorphous silicon; thin film transistor;
D O I
10.1143/JJAP.40.L81
中图分类号
O59 [应用物理学];
学科分类号
摘要
A combinatorial approach is proposed and demonstrated for the parallel fabrication of a-Si:H, alloy and a-Si:H based devices, by employing simple masking schemes in conventional plasma-enhanced chemical vapor deposition (PECVD). The results are presented for a-Si:H thin film transistors. A (7 x 7) combinatorial device library was deposited on a (indium tin oxide/glass) substrate with the thicknesses of a-SiN:H and a-Si:H as combinatorial variables along the X and Y axes, respectively. Different a-Si:H TFTs in the library were evaluated to yield electrical performance with on-to-off current ratios exceeding 10(4) and threshold voltages from 0.3 to 4.5 V. Combinatorial PECVD offers an efficient and low cost means of studying the a-Si:H device performance and optimization.
引用
收藏
页码:L81 / L83
页数:3
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