Low temperature chemical vapor deposition of ZrO2 on Si(100) using anhydrous zirconium(IV) nitrate

被引:39
作者
Smith, RC [1 ]
Hoilien, N
Taylor, CJ
Ma, TZ
Campbell, SA
Roberts, JT
Copel, M
Buchanan, DA
Gribelyuk, M
Gladfelter, WL
机构
[1] Univ Minnesota, Dept Chem, Minneapolis, MN 55455 USA
[2] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA
[3] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
关键词
D O I
10.1149/1.1393922
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Anhydrous zirconium(IV) nitrate was used as a volatile, carbon-free precursor for the low pressure chemical vapor deposition of thin ZrO2 films on silicon (100) substrates. Depositions were performed at substrate temperatures between 300 and 500 degrees C at total reactor pressures between 0.25 and 1.1 Torr. During deposition the N-2 carrier gas (flow rates = 20 or 100 seem) was diverted through the precursor vessel which was maintained between 80 and 95 degrees C. Under these conditions typical growth rates reached 10.0 nm/min. The polycrystalline films were predominantly monoclinic ZrO2 with compositions very near the ideal value. Cross-sectional transmission electron microscopy and medium energy ion scattering established that an interfacial layer of SiO2 separates the silicon substrate from the ZrO2. Electrical measurements made on capacitors constructed of 58 nm thick films of ZrO2 with a platinum top electrode suggest that charge trapping occurs in the Si/ZrO2 interfacial region. (C) 2000 The Electrochemical Society. S0013-4651(00)01-089-2. All rights reserved.
引用
收藏
页码:3472 / 3476
页数:5
相关论文
共 44 条
[1]   DINITROGEN TETROXIDE, NITRIC-ACID, AND THEIR MIXTURES AS MEDIA FOR INORGANIC REACTIONS [J].
ADDISON, CC .
CHEMICAL REVIEWS, 1980, 80 (01) :21-39
[2]   REACTION ANALYSIS FOR ZRO2 AND Y2O3 THIN-FILM GROWTH BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING BETA-DIKETONATE COMPLEXES [J].
AKIYAMA, Y ;
SATO, T ;
IMAISHI, N .
JOURNAL OF CRYSTAL GROWTH, 1995, 147 (1-2) :130-146
[3]   Intermixing at the tantalum oxide/silicon interface in gate dielectric structures [J].
Alers, GB ;
Werder, DJ ;
Chabal, Y ;
Lu, HC ;
Gusev, EP ;
Garfunkel, E ;
Gustafsson, T ;
Urdahl, RS .
APPLIED PHYSICS LETTERS, 1998, 73 (11) :1517-1519
[4]   THIN-FILMS OF METAL-OXIDES ON SILICON BY CHEMICAL VAPOR-DEPOSITION WITH ORGANOMETALLIC COMPOUNDS .1. [J].
BALOG, M ;
SCHIEBER, M ;
MICHMAN, M ;
PATAI, S .
JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :298-&
[5]   CHARACTERISTICS OF GROWTH OF FILMS OF ZIRCONIUM AND HAFNIUM OXIDES (ZRO2, HFO2) BY THERMAL-DECOMPOSITION OF ZIRCONIUM AND HAFNIUM BETA-DIKETONATE COMPLEXES IN THE PRESENCE AND ABSENCE OF OXYGEN [J].
BALOG, M ;
SCHIEBER, M ;
MICHMAN, M ;
PATAI, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) :1203-1207
[6]   CHEMICAL VAPOR-DEPOSITION AND CHARACTERIZATION OF ZRO2 FILMS FROM ORGANOMETALLIC COMPOUNDS [J].
BALOG, M ;
SCHIEBER, M ;
MICHMAN, M ;
PATAI, S .
THIN SOLID FILMS, 1977, 47 (02) :109-120
[7]   OPTICAL ENERGY GAPS IN MONOCLINIC OXIDES OF HAFNIUM AND ZIRCONIUM AND THEIR SOLID SOLUTIONS [J].
BENDORAI.JG ;
SALOMON, RE .
JOURNAL OF PHYSICAL CHEMISTRY, 1965, 69 (10) :3666-&
[8]   MOSFET transistors fabricated with high permitivity TiO2 dielectrics [J].
Campbell, SA ;
Gilmer, DC ;
Wang, XC ;
Hsieh, MT ;
Kim, HS ;
Gladfelter, WL ;
Yan, JH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (01) :104-109
[9]   Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor [J].
Chaneliere, C ;
Four, S ;
Autran, JL ;
Devine, RAB ;
Sandler, NP .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (09) :4823-4829
[10]  
Colombo DG, 1998, CHEM VAPOR DEPOS, V4, P220, DOI 10.1002/(SICI)1521-3862(199812)04:06<220::AID-CVDE220>3.0.CO