The effects of surface treatment on device performance in pentacene-based thin film transistor

被引：38

作者：

Koo, JB ^{[1
]}

Kim, SH

Lee, JH

Ku, CH

Lim, SC

Zyung, T

机构：

[1] Elect & Telecommun Res Inst, Future Technol Res Div, Taejon 305350, South Korea

[2] Kyung Hee Univ, Informat Display Dept, Seoul 130701, South Korea

来源：

SYNTHETIC METALS | 2006年 / 156卷 / 2-4期

关键词：

organic thin film transistor; threshold voltage; mobility; pentacene; HMDS;

D O I：

10.1016/j.synthmet.2005.10.016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the influence of surface treatment using hexamethyldisilazane (HMDS) on device performance of pentacene-based thin film transistor. The samples with surface treatment using HMDS show higher mobility, lower Subthreshold slope, and lower off-current compared to the untreated samples. We have also investigated the effect of various coating methods of HMDS on device performance. In the case of post-baked samples after spin coating, the improvements of mobility and on-current are larger than those of spin-coated samples. Especially a dip-coated sample has threshold voltage of -4.11 V and turn-on voltage of -0.03 V, showing the enhancement mode characteristics, which is useful for the operation as a circuit and a switch device for active-matrix displays. However, the mobility of dip-coated sample is one order lower than that of spin-coated sample, and hysteresis is larger than that of spin-coated sample. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：99 / 103

页数：5

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