Tunable epitaxial growth of magnetoresistive La2/3Sr1/3MnO3 thin films

被引：27

作者：

Fontcuberta, J ^{[1
]}

Bibes, M

Martínez, B

Trtik, V

Ferrater, C

Sánchez, F

Varela, M

机构：

[1] CSIC, Inst Ciencia Mat Barcelona, Bellaterra 08913, Catalunya, Spain

[2] Univ Barcelona, Dept Fis Aplicada & Opt, E-08028 Barcelona, Spain

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 08期

关键词：

D O I：

10.1063/1.370486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the growth of epitaxial La2/3Sr1/3MnO3 thin films on buffered Si(001) substrates. We show that a suitable choice of the buffer heterostructure allows one to obtain epitaxial (00h), (0hh), and (hhh) manganite thin films. The magnetotransport properties are investigated and we have found that the low-field magnetoresistance is directly related to the width of the normal-to-plane rocking curves, irrespective of the film orientation. The magnetic anisotropy of these films has also been determined. (C) 1999 American Institute of Physics. [S0021-8979(99)35108-2].

引用

页码：4800 / 4802

页数：3

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