RF modeling issues of deep-submicron MOSFETs for circuit design

被引：18

作者：

Cheng, YH ^{[1
]}

Schroter, M ^{[1
]}

Enz, C ^{[1
]}

Matloubian, M ^{[1
]}

Pehlke, D ^{[1
]}

机构：

[1] Rockwell Semicond Syst, Newport Beach, CA 92660 USA

来源：

1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICSICT.1998.785910

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper provides an overview of important issues in CMOS MOSFET modeling for radio frequency (RF) applications. Beginning with a brief review of state-of-the-art of RF CMOS technology, we discuss modeling issues that need to be resolved to meet the requirements from circuit designers. Then, we present our current achievements and activities in compact MOSFET modeling for RF circuit design.

引用

页码：416 / 419

页数：4

共 12 条

[1]

Abidi A. A., 1994, 1994 IEEE Symposium on Low Power Electronics. Digest of Technical Papers (Cat. No.94TH0669-2), P18, DOI 10.1109/LPE.1994.573188

[2]

CHENG Y, 1997, M972 UCBERL

[3]

CHENG Y, UNPUB IEDM 98

[4] A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation [J].

Cheng, YH ;

Jeng, MC ;

Liu, ZH ;

Huang, JH ;

Chan, MS ;

Chen, K ;

Ko, PK ;

Hu, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (02) :277-287

[5] Silicon RF devices fabricated by ULSI processes featuring 0.1-mu m SOI-CMOS and suspended inductors [J].

Hisamoto, D ;

Tanaka, S ;

Tanimoto, T ;

Nakamura, Y ;

Kimura, S .

1996 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1996, :104-105

[6] Broadband, 0.25μm CMOS LNAs with Sub-2dB NF for GSM applications [J].

Huang, QT ;

Orsatti, P ;

Piazza, F ;

Yoshitomi, T .

IEEE 1998 CUSTOM INTEGRATED CIRCUITS CONFERENCE - PROCEEDINGS, 1998, :67-70

[7]

JEN SH, 1998, ISDERC 98

[8] A compact-charge LDD-MOSFET model [J].

Klein, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (09) :1483-1490

[9] rf MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model [J].

Liu, W ;

Gharpurey, R ;

Chang, MC ;

Erdogan, U ;

Aggarwal, R ;

Mattia, JP .

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :309-312

[10]

OU J, 1998, 1998 S VLSI TECHN JU

← 1 2 →