Nucleation in Si(001) homoepitaxial growth

被引：53

作者：

Theis, W

Tromp, RM

机构：

[1] IBM Research Division, T.J.Watson Research Center, Yorktown Heights, NY, 10598

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.76.2770

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

From low energy electron microscopy observations of the surface topography of Si(001) during homoepitaxial growth at 650 degrees C, we have determined the nucleation density profile on top of a ''base'' island, and the distribution of the base island radius at the time of nucleation. Comparison with homogeneous nucleation theory yields a typical critical nucleus size of similar to 650 dimers, and allows nucleation on Si(001) to be understood in a common framework with equilibrium step-edge fluctuations and 2D island ripening.

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页码：2770 / 2773

页数：4

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