Electron and phonon renormalization near charged defects in carbon nanotubes

被引:238
作者
Maciel, Indhira O. [3 ]
Anderson, Neil [1 ,2 ]
Pimenta, Marcos A. [3 ]
Hartschuh, Achim [4 ,5 ]
Qian, Huihong [4 ,5 ]
Terrones, Mauricio [6 ]
Terrones, Humberto [6 ]
Campos-Delgado, Jessica [6 ]
Rao, Apparao M. [7 ,8 ]
Novotny, Lukas [1 ,2 ]
Jorio, Ado [3 ,9 ]
机构
[1] Univ Rochester, Inst Opt, Rochester, NY 14627 USA
[2] Univ Rochester, Dept Phys, Rochester, NY 14627 USA
[3] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
[4] Univ Munich, Dept Chem & Biochem Phys Chem, D-80539 Munich, Germany
[5] Univ Munich, CeNS, D-80539 Munich, Germany
[6] IPICYT, Adv Mat Phys, San Luis Potosi 78216, SLP, Mexico
[7] Clemson Univ, Dept Phys & Astron, Clemson, SC 29621 USA
[8] Clemson Univ, Ctr Opt Mat Sci & Engn Technol, Clemson, SC 29621 USA
[9] Inst Nacl Metrol Normalizacao & Qualidade Ind INM, Div Mat Metrol, BR-25250020 Duque De Caxias, RJ, Brazil
关键词
D O I
10.1038/nmat2296
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Owing to their influence on electrons and phonons, defects can significantly alter electrical conductance, and optical, mechanical and thermal properties of a material. Thus, understanding and control of defects, including dopants in low-dimensional systems, hold great promise for engineered materials and nanoscale devices. Here, we characterize experimentally the effects of a single defect on electrons and phonons in single-wall carbon nanotubes. The effects demonstrated here are unusual in that they are not caused by defect-induced symmetry breaking. Electrons and phonons are strongly coupled in sp(2) carbon systems, and a defect causes renormalization of electron and phonon energies. We find that near a negatively charged defect, the electron velocity is increased, which in turn influences lattice vibrations locally. Combining measurements on nanotube ensembles and on single nanotubes, we capture the relation between atomic response and the readily accessible macroscopic behaviour.
引用
收藏
页码:878 / 883
页数:6
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