Microelectromechanical capacitors for RF applications

被引:60
作者
Nieminen, H
Ermolov, V
Nybergh, K
Silanto, S
Ryhänen, T
机构
[1] Nokia Research Center, FIN-00045 NOKIA GROUP
关键词
D O I
10.1088/0960-1317/12/2/312
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the design principles of electrostatically actuated microelectromechanical capacitors. Key properties, such as capacitance tuning range, quality factor (Q), different control methods, thermal stability, effect of radio frequency signal on capacitance and gas damping are examined. Experimental devices were designed and fabricated using the design principles. The two-gap capacitor has a measured nominal capacitance of 1.58 pF and achieves a tuning range of 2.25:1 with parasitics. When all parasitic capacitances to the substrate are extracted the measured nominal capacitance is 1.15 pF and the tuning range is 2.71:1. The device is made of electroplated gold and has a Q of 66 at 1 GHz, and 53 at 2 GHz. In addition, two- and three-state capacitors were designed, fabricated and characterized.
引用
收藏
页码:177 / 186
页数:10
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