Structures and coalescence behavior of size-selected silicon nanoclusters studied by surface-plasmon-polariton enhanced Raman spectroscopy

被引:92
作者
Honea, EC [1 ]
Ogura, A
Peale, DR
Félix, C
Murray, CA
Raghavachari, K
Sprenger, WO
Jarrold, MF
Brown, WL
机构
[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
[2] NEC Corp Ltd, Silicon Syst Res Labs, Tsukuba, Ibaraki, Japan
[3] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
[4] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[5] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
关键词
D O I
10.1063/1.479153
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The structures and coalescence behavior of size-selected, matrix-isolated silicon clusters have been studied using surface-plasmon-polariton (SPP) enhanced Raman spectroscopy. The cluster ions were produced in a laser vaporization source, mass selected then deposited into a co-condensed matrix of Ar, Kr or N-2 on a liquid He cooled substrate. Raman spectra from monodisperse samples of the smaller clusters studied, Si-4, Si-6 and Si-7, show sharp, well-resolved, vibrations which are in good agreement with predictions based on ab initio calculations. From these comparisons we confirm that Si-4 is a planar rhombus, and assign Si-6 as a distorted octahedron and Si-7 as a pentagonal bypyramid. Si-5 depositions down to 5 eV did not reveal a measurable Raman spectrum under our experimental conditions. Evidence for cluster-cluster aggregation (or fragmentation) was observed under some conditions, even for a "magic number" cluster such as Si-6. The spectra of the aggregated small clusters were identical to those observed for directly deposited larger cluster "bands," such as Si25-35. The Raman spectra of the aggregated clusters bear some similarity to those of bulk amorphous silicon. Cluster-deposited thin films were prepared by sublimating the matrix material. Even under these "soft landing" conditions, changes in the Raman spectrum are observed with the thin films showing even greater similarity to amorphous silicon. (C) 1999 American Institute of Physics. [S0021-9606(99)70521-0].
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页码:12161 / 12172
页数:12
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