Direct imaging of phase separation in ZnCdO layers

被引：58

作者：

Bertram, F

Giemsch, S

Forster, D

Christen, J

Kling, R

Kirchner, C

Waag, A

机构：

[1] Otto Von Guericke Univ, Inst Phys Expt, D-39106 Magdeburg, Germany

[2] Univ Ulm, Dept Semicond Phys, Ulm, Germany

[3] Tech Univ Carolo Wilhelmina Braunschweig, Dept Semicond Technol, D-3300 Braunschweig, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 06期

关键词：

D O I：

10.1063/1.2172146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A direct correlation of structural and optical properties of MOCVD-grown ZnCdO-layers with a systematic variation of Cd-content has been achieved on a microscopic scale using highly spatially and spectrally resolved cathodoluminescence. The ZnCdO layer luminescence measured in cathodoluminescence wavelength images reveals strong lateral fluctuations directly visualizing local band gap fluctuation as a consequence of different local Cd incorporation. We give direct evidence for a chemical phase separation into Cd-rich and Cd-poor nanodomains in ZnCdO. (c) 2006 American Institute of Physics.

引用

收藏

页数：3

相关论文

共 14 条

[1] Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1-xN layers [J].

Bell, A ;

Srinivasan, S ;

Plumlee, C ;

Omiya, H ;

Ponce, FA ;

Christen, J ;

Tanaka, S ;

Fujioka, A ;

Nakagawa, Y .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (09) :4670-4674

[2] Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy [J].

Bertram, F ;

Riemann, T ;

Christen, J ;

Kaschner, A ;

Hoffmann, A ;

Thomsen, C ;

Hiramatsu, K ;

Shibata, T ;

Sawaki, N .

APPLIED PHYSICS LETTERS, 1999, 74 (03) :359-361

[3]

BERTRAM F, UNPUB

[4] SCANNING CATHODOLUMINESCENCE MICROSCOPY - A UNIQUE APPROACH TO ATOMIC-SCALE CHARACTERIZATION OF HETEROINTERFACES AND IMAGING OF SEMICONDUCTOR INHOMOGENEITIES [J].

CHRISTEN, J ;

GRUNDMANN, M ;

BIMBERG, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04) :2358-2368

[5] LINE-SHAPES OF INTERSUBBAND AND EXCITONIC RECOMBINATION IN QUANTUM-WELLS - INFLUENCE OF FINAL-STATE INTERACTION, STATISTICAL BROADENING, AND MOMENTUM CONSERVATION [J].

CHRISTEN, J ;

BIMBERG, D .

PHYSICAL REVIEW B, 1990, 42 (11) :7213-7219

[6] Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy [J].

Gruber, T ;

Kirchner, C ;

Kling, R ;

Reuss, F ;

Waag, A ;

Bertram, F ;

Forster, D ;

Christen, J ;

Schreck, M .

APPLIED PHYSICS LETTERS, 2003, 83 (16) :3290-3292

[7] Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells [J].

Levin, TM ;

Jessen, GH ;

Ponce, FA ;

Brillson, LJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06) :2545-2552

[8] Radiative and nonradiative recombination processes in lattice-matched (Cd,Zn)O/(Mg,Zn)O multiquantum wells [J].

Makino, T ;

Chia, CH ;

Tuan, NT ;

Segawa, Y ;

Kawasaki, M ;

Ohtomo, A ;

Tamura, K ;

Koinuma, H .

APPLIED PHYSICS LETTERS, 2000, 77 (11) :1632-1634

[9] Band gap engineering based on MgxZn1-xO and CdyZn1-yO ternary alloy films [J].

Makino, T ;

Segawa, Y ;

Kawasaki, M ;

Ohtomo, A ;

Shiroki, R ;

Tamura, K ;

Yasuda, T ;

Koinuma, H .

APPLIED PHYSICS LETTERS, 2001, 78 (09) :1237-1239

[10] Blue photoluminescence from ZnCdO films grown by molecular beam epitaxy [J].

Sakurai, K ;

Kubo, T ;

Kajita, D ;

Tanabe, T ;

Takasu, H ;

Fujita, S ;

Fujita, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (11B) :L1146-L1148