Photoluminescence and electrical properties of epitaxial Al-doped ZnO transparent conducting thin films

被引：17

作者：

Noh, Jun Hong ^{[1
]}

Cho, In-Sun ^{[1
]}

Lee, Sangwook ^{[1
]}

Cho, Chin Moo ^{[1
]}

Han, Hyun Soo ^{[1
]}

An, Jae-Sul ^{[1
]}

Kwak, Chae Hyun ^{[1
]}

Kim, Jin Yong ^{[2
]}

Jung, Hyun Suk ^{[3
]}

Lee, Jung-Kun ^{[4
]}

Hong, Kug Sun ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

[2] Natl Renewable Energy Lab, Chem & Biosci Ctr, Golden, CO 80401 USA

[3] Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea

[4] Univ Pittsburgh, Dept Mech Engn & Mat Sci, Pittsburgh, PA 15260 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2009年 / 206卷 / 09期

关键词：

BAND-EDGE LUMINESCENCE; OPTICAL-PROPERTIES; EMISSION; GREEN;

D O I：

10.1002/pssa.200881790

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial ZnO and Al-doped ZnO (AZO) thin films were grown on (0001)-sapphire substrates using pulsed laser deposition. The photoluminescence spectrum of the highly conductive (1.3 x 10(3) S cm(-1)), as-grown AZO shows a poor near band edge (NBE) emission (3.30 eV) and no deep level emission at room temperature. In addition, the peak (3.386 eV) for the free excitons of AZO showed thermal quenching behavior with two activation energies (38.2 and 10.0 meV). The poor NBE emission is attributed to the nonradiative recombination center created by Al doping. Highly conductive (6.0 x 10(2) S cm(-1)) and intense NBE emitting AZO films could be achieved by the reduction of the nonradiative recombination centers through hydrogen annealing. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2133 / 2138

页数：6

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