Effect of thermal annealing on ZnO:hAl thin films grown by spray pyrolysis

被引：35

作者：

El Manouni, A.

Manjon, F. J.

Perales, M.

Mollar, M.

Mari, B.

Lopez, M. C.

Barrado, J. R. Ramos

机构：

[1] Univ Politecn Valencia, Dept Fis Aplicada, E-46022 Valencia, Spain

[2] Univ Hassa 2, Dept Phys, Mohammadia, Morocco

[3] Univ Malaga, Dept Fis Aplicada 1, E-29071 Malaga, Spain

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2007年 / 42卷 / 1-6期

关键词：

zinc oxide; II-VI semi conductors; Wide bandgap semiconductors;

D O I：

10.1016/j.spmi.2007.04.005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report the effect of thermal annealing in air on the structural and optical properties of undoped and aluminium-doped (1%-4%) zinc oxide (AZO) thin films, grown by the spray pyrolysis technique on quartz substrates. Films were characterized by X-ray diffraction, low-temperature photoluminescence, electrical resistivity, and Raman spectroscopy after annealing at temperatures between 500 and 900 degrees C. Annealing in air improves the long-range order crystalline quality of the bulk crystals, but promotes a number of point defects in the surface affecting both the resistivity and the photoluminescence. (c) 2007 Elsevier Ltd. All rights reserved.

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收藏

页码：134 / 139

页数：6

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