Investigation on the variation of green, yellow, and orange emission properties of ZnO thin film

被引:32
作者
Kang, HS [1 ]
Kim, JW [1 ]
Lim, SH [1 ]
Chang, HW [1 ]
Kim, GH [1 ]
Kim, JH [1 ]
Lee, SY [1 ]
机构
[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
关键词
D O I
10.1016/j.spmi.2005.08.042
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
ZnO thin films were fabricated by Pulsed laser deposition. ZnO thin films showed the various photoluminescence bands centered around ultraviolet (380 nm), green (490-530 nm), yellow (570-590 nm), and orange region (610-640 nm) depending on fabrication conditions or impurity doping with Si and P. Pure ZnO thin film showed ultraviolet emission and green emission and Si-doped ZnO exhibited ultraviolet and yellow emission, the intensity of which was controlled by an annealing process. Orange and yellow emission were controlled by P and Si diffusion into ZnO. Si doping and P doping were confirmed by Rutherford back scattering (RBS) and secondary ion mass spectrometry (SIMS). The mechanism of visible emission of ZnO was investigated. (C) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:193 / 201
页数:9
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