Fabrication of ZnO thin film diode using laser annealing

被引：140

作者：

Lee, SY ^{[1
]}

Shim, ES ^{[1
]}

Kang, HS ^{[1
]}

Pang, SS ^{[1
]}

Kang, JS ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

来源：

THIN SOLID FILMS | 2005年 / 473卷 / 01期

关键词：

ZnO; laser annealing; PLD; P-n junction; light-emitting diode;

D O I：

10.1016/j.tsf.2004.06.194

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A p-n homojunction was obtained by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film. The deposition process of ZnO and Zn3P2 thin film was performed by pulsed laser deposition (PLD). A p-n junction was formed by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film and showed typical I-V characteristics of a diode. Laser annealing could be a useful technique for the fabrication of an ultraviolet light-emitting diode or an ultraviolet laser diode. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：31 / 34

页数：4

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