''Carbon cluster model'' for electronic states at SiC/SiO2 interfaces

被引：66

作者：

Bassler, M ^{[1
]}

Pensl, G ^{[1
]}

Afanas'ev, VV ^{[1
]}

机构：

[1] KATHOLIEKE UNIV LEUVEN, LAB HALFGELEIDERFYS, B-3001 LOUVAIN, BELGIUM

来源：

关键词：

SiC/Sio(2)-interface; MOS-structure; density of interface states; carbon cluster model;

D O I：

10.1016/S0925-9635(97)00074-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic properties of the SiC/SiO2 interface are studied for a series of SiC polytypes (3C, 4H, 6H) using various electrical methods and internal photoemission spectroscopy. The energy distribution of states at SiC/SiO2 interfaces is found to be similar for all the investigated polytypes. The lowest density of states measured at SiC/SiO2 interfaces is at least one order of magnitude higher than the density of states at Si/SiO2 interfaces. We have strong indications that this enhancement is caused by residual carbon (graphite-like films, carbon clusters) bonded at the SiC/SiO2 interface. We propose a ''carbon cluster model'', which qualitatively describes the electrical properties of (3C, 4H, 6H)-SiC MOS structures. (C) 1997 Elsevier Science S.A.

引用

页码：1472 / 1475

页数：4

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