DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY

被引：10

作者：

DESETA, M

FIORINI, P

COPPOLA, F

EVANGELISTI, F

机构：

[1] Department of Physics, University La Sapienza, 00185 Roma

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80257-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The density of occupied states at the valence band edge and in the pseudo-gap is investigated by using Total yield spectroscopy. It is found that close to the valence band edge the yield spectra follow a (h-nu - E(v))3/(h-nu)2 dependence. A large increase of gap state density with increasing carbon content is also found.

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页码：867 / 870

页数：4

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