The Role of the Oxygen/Water Redox Couple in Suppressing Electron Conduction in Field-Effect Transistors

被引：281

作者：

Aguirre, Carla M. ^{[2
]}

Levesque, Pierre L. ^{[1
]}

Paillet, Matthieu ^{[1
]}

Lapointe, Francois ^{[1
]}

St-Antoine, Benoit C. ^{[2
]}

Desjardins, Patrick ^{[2
]}

Martel, Richard ^{[1
]}

机构：

[1] Univ Montreal, Dept Chim, Montreal, PQ H3C 3J7, Canada

[2] Ecole Polytech, Dept Genie Phys, Montreal, PQ H3C 3A7, Canada

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 30期

基金：

加拿大自然科学与工程研究理事会;

关键词：

WALLED CARBON NANOTUBES; ORGANIC SEMICONDUCTORS; LOGIC GATES; NETWORKS; DEVICES; TRANSPARENT; TRANSPORT; FILMS;

D O I：

10.1002/adma.200900550

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The suppression of electron (n-type) conduction observed in back-gated field effect transistors is the result of an electrochemical charge transfer process to the oxygen/water layer adsorbed on hydrophilic substrates. The impact of this phenomenon is demonstrated with nanoscale and thin-film carbon nanotube transistors.

引用

页码：3087 / +

页数：6

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