Ambipolar organic field-effect transistor based on an organic heterostructure

被引：190

作者：

Rost, C ^{[1
]}

Gundlach, DJ ^{[1
]}

Karg, S ^{[1
]}

Riess, W ^{[1
]}

机构：

[1] IBM Corp, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 10期

关键词：

D O I：

10.1063/1.1702141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ambipolar charge injection and transport are a prerequisite for a light-emitting organic fieldeffect transistor (OFET). Organic materials, however, typically show unipolar charge-carrier transport characteristics. Consequently, organic thin-film field-effect transistors based on a single material as active layer can typically either be operated as p- or as n-channel device. In this article we show that by using a heterostructure with pentacene as hole-transport and N,N'-Ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) as electron-transport material, ambipolar characteristics, i.e., simultaneous p- and n-channel formation, can be observed in a single device. An OFET structure is investigated in which electrons and holes are injected from Mg top and Au bottom contacts into the PTCDI-C13H27 and pentacene layers, respectively. Our device exhibits electron and hole mobilities of 3x10(-3) and 1x10(-4) cm(2)/V s, respectively. This device architecture serves as a model structure for ambipolar field-effect transistors, which are a prerequisite for light-emitting field-effect transistors. (C) 2004 American Institute of Physics.

引用

页码：5782 / 5787

页数：6

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