Multiple bonding configurations for Te adsorbed on the Ge(001) surface

被引：16

作者：

Lyman, PF

Marasco, DL

Walko, DA

Bedzyk, MJ ^{[1
]}

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

[3] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

[4] Univ Wisconsin, Dept Phys, Milwaukee, WI 53201 USA

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.60.8704

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using high-resolution x-ray standing waves and low-energy electron diffraction, the structure of Te adsorbed on Ge(001) was studied. A coverage-dependent structural rearrangement was observed between Te coverages of 1 and 0.5 monolayer (ML). At Te coverages near 1 ML, Te was found to adsorb in a bridge site, as expected. However, at Te coverages near 0.5 ML, a structure unanticipated for Group VI/Group N adsorption was discovered. Te-Ge heterodimers were formed with an average valency of 5, allowing them to satisfy all surface dangling bonds. The results help explain the efficacy of Te as a surfactant in epitaxial growth of Ge/Si(001).

引用

页码：8704 / 8712

页数：9

共 42 条

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