GROWTH OF GE ON A TE ADSORBED SI(001) SURFACE

被引：40

作者：

HIGUCHI, S

NAKANISHI, Y

机构：

[1] Tokyo Research Center, TOSOH Corporation, Kanagawa 252, 2743-1, Hayakawa, Ayase

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 09期

关键词：

D O I：

10.1063/1.350809

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth process in the initial deposition stage of Ge films on an Si(001) surface where tellurium is adsorbed was investigated. The growth mode of these films was found to change to layered growth on a Te/Si(001) surface, i.e., Te atoms were observed on the surface of the Ge films as a result of successive site exchanges between the Te and Ge atoms. Thus, Te is believed to act as a surfactant to grow Ge in a layer-by-layer mode on a Si substrate. The growth process was observed in situ by reflection high-energy electron diffraction and low-energy electron diffraction, with the microstructure of Ge films being examined in detail using a transmission electron microscope.

引用

页码：4277 / 4285

页数：9

共 18 条

[1]

AARTS J, 1986, APPL PHYS LETT, V48, P931, DOI 10.1063/1.96662

[2] ELECTROREFLECTANCE AND PHOTOREFLECTANCE OF ULTRATHIN GE/SI SUPERLATTICES GROWN BY PHASE-LOCKED EPITAXY [J].

ASAMI, K ;

MIKI, K ;

SAKAMOTO, K ;

SAKAMOTO, T ;

GONDA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (03) :L381-L384

[3] ATOMIC-STEP REARRANGEMENT ON SI(100) BY INTERACTION WITH ARSENIC AND THE IMPLICATION FOR GAAS-ON-SI EPITAXY [J].

BRINGANS, RD ;

BIEGELSEN, DK ;

SWARTZ, LE .

PHYSICAL REVIEW B, 1991, 44 (07) :3054-3063

[4] ARSENIC-TERMINATED GE(111) - AN IDEAL 1 X 1 SURFACE [J].

BRINGANS, RD ;

UHRBERG, RIG ;

BACHRACH, RZ ;

NORTHRUP, JE .

PHYSICAL REVIEW LETTERS, 1985, 55 (05) :533-536

[5] RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES [J].

CERDEIRA, F ;

PINCZUK, A ;

BEAN, JC ;

BATLOGG, B ;

WILSON, BA .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1138-1140

[6] SURFACTANTS IN EPITAXIAL-GROWTH [J].

COPEL, M ;

REUTER, MC ;

KAXIRAS, E ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1989, 63 (06) :632-635

[7] INFLUENCE OF SURFACTANTS IN GE AND SI EPITAXY ON SI(001) [J].

COPEL, M ;

REUTER, MC ;

VONHOEGEN, MH ;

TROMP, RM .

PHYSICAL REVIEW B, 1990, 42 (18) :11682-11689

[8]

Hansen M., 1985, CONSTITUTION BINARY

[9]

HIGUCHI S, 1991, SURF SCI, V254, pL465, DOI 10.1016/0039-6028(91)90625-3

[10] INITIAL-STAGE OF HETEROEPITAXY OF GE ON SI(111)-7 X 7 AND (100)-2 X 1 SURFACES STUDIED BY LOW-ENERGY ELECTRON-LOSS SPECTROSCOPY (LEELS) [J].

ISHIMARU, N ;

UEBA, H ;

TATSUYAMA, C .

SURFACE SCIENCE, 1988, 193 (1-2) :193-211

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