Flexible pentacene ion sensitive field effect transistor with a hydrogenated silicon nitride surface treated Parylene top gate insulator

被引:22
作者
Diallo, K. [1 ]
Lemiti, M. [1 ]
Tardy, J. [1 ]
Bessueille, F. [2 ]
Jaffrezic-Renault, N. [2 ]
机构
[1] Ecole Cent Lyon, Lyon Inst Nanotechnol, CNRS, UMR 5270, F-69134 Ecully, France
[2] Univ Lyon 1, Sci Analyt Lab, CNRS, UMR 5180, F-69621 Villeurbanne, France
关键词
chemical vapour deposition; dielectric materials; electrolytes; hydrogen; ion sensitive field effect transistors; organic semiconductors; silicon compounds; thin films;
D O I
10.1063/1.3013578
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the realization of flexible ion sensitive organic field effect transistors based on pentacene on which Parylene-C was deposited as top gate dielectric. In order to create proton sensitive sites at the insulator/electrolyte interface, Parylene-C surface has been covered with a thin layer of hydrogenated silicon nitride (SiN:H) deposited by photochemical vapor deposition at moderate temperature. The combination of Parylene and SiN:H enables the realization of highly reproducible and good performance transistors as well as ion sensitive sensors with an excellent pH response both in the acidic and alkaline pH range in a nearly all plastic technology.
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页数:3
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