Surface roughening at the one-monolayer Sb/Si(100) interface

被引:10
作者
Saranin, AA
Zotov, AV
Kotlyar, VG
Lifshits, VG
Kubo, O
Harada, T
Kobayashi, T
Yamaoka, N
Katayama, M
Oura, K [1 ]
机构
[1] Osaka Univ, Fac Engn, Dept Elect Engn, Osaka 565, Japan
[2] Inst Automat & Control Proc, Vladivostok 690041, Russia
[3] Far Eastern State Univ, Fac Phys & Engn, Vladivostok 690000, Russia
[4] Vladivostok State Univ Econ & Serv, Dept Elect, Vladivostok 690600, Russia
关键词
D O I
10.1103/PhysRevB.65.033312
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using scanning tunneling microscopy observations, it has been found that the atomically flat 1-ML Sb/Si(100) interface is metastable at a temperature of about 750 degreesC and becomes rough upon brief annealing, although the Sb-dimer-row structure of the top layer is completely preserved. The roughening is explained by displacive adsorption of Sb (i.e., by substitution of the top-layer Si atoms by Sb atoms) and this phenomenon is suggested to be a common one for group-V adsorbates on Si(100) and Ge(100) surfaces.
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页码:1 / 4
页数:4
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