Critical thickness for the solid phase epitaxy: Si/Sb/Si(001)

被引：6

作者：

Kono, S

Goto, T

Ogura, Y

Abukawa, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 9B期

关键词：

solid phase epitaxy; delta-doping; Si(100); Si(001); Sb; Auger electron spectroscopy; Sb MNN Auger electron; Si KLL Auger electron;

D O I：

10.1143/JJAP.35.L1211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The early stages of solid-phase epitaxial (SPE) formation of Si/Sb(delta-layer)/Si(001) were studied using Anger electron spectroscopy. The Auger intensity ratio (Sb MNN)/(Si KLL) was measured as a function of the capping Si layer thickness. We found that there exists a critical capping Si thickness, similar to 8-10 Si layers. Below this critical thickness, essentially all Sb atoms are segregated to the surface during the Si capping layer crystallization. Possible causes for this critical thickness are discussed and the need for further study under different SPE conditions is pointed out.

引用

页码：L1211 / L1214

页数：4

共 17 条

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