In situ x-ray scattering study of Ag(110) nanostructuring by ion erosion -: art. no. 153406

被引:13
作者
Boragno, C [1 ]
de Mongeot, FB
Costantini, G
Valbusa, U
Felici, R
Smilgies, DM
Ferrer, S
机构
[1] UdR Genova, INFM, Genoa, Italy
[2] Dipartimento Fis, I-16146 Genoa, Italy
[3] ESRF, OGG, INFM, Grenoble, France
[4] Cornell Univ, CHESS, Ithaca, NY 14853 USA
来源
PHYSICAL REVIEW B | 2002年 / 65卷 / 15期
关键词
D O I
10.1103/PhysRevB.65.153406
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The time evolution of the morphology of the Ag(110) surface during ion sputtering has been studied in situ and in real time by x-ray based techniques. The surface was bombarded with Ar+ ions at an energy of 1 keV in the temperature range 100-320 K. Grazing-incidence x-ray scattering measurements have been carried out in order to characterize the shape and the time evolution of the regular structures (mounds or ripples) created on the surface. The results show that the periodicity (i.e., the average separation between features) increases as function of the sputtering time, following a power-law behavior. Moreover, the slope of the mounds/ripples depends on temperature, ranging between 6 and 12degrees if measured along the [1 -1 0] direction and between 8 and 10degrees along [0 0 1].
引用
收藏
页码:1 / 4
页数:4
相关论文
共 26 条
[1]   Effects of crystalline microstructure on epitaxial growth [J].
Amar, JG ;
Family, F .
PHYSICAL REVIEW B, 1996, 54 (20) :14742-14753
[2]   SURFACE RECONSTRUCTION IN LAYER-BY-LAYER SPUTTERING OF SI(111) [J].
BEDROSSIAN, P ;
KLITSNER, T .
PHYSICAL REVIEW B, 1991, 44 (24) :13783-13786
[3]   LAYER-BY-LAYER SPUTTERING AND EPITAXY OF SI(100) [J].
BEDROSSIAN, P ;
HOUSTON, JE ;
TSAO, JY ;
CHASON, E ;
PICRAUX, ST .
PHYSICAL REVIEW LETTERS, 1991, 67 (01) :124-127
[4]  
BORAGNO C, UNPUB
[5]   THEORY OF RIPPLE TOPOGRAPHY INDUCED BY ION-BOMBARDMENT [J].
BRADLEY, RM ;
HARPER, JME .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04) :2390-2395
[6]   ROUGHENING INSTABILITY AND EVOLUTION OF THE GE(001) SURFACE DURING ION SPUTTERING [J].
CHASON, E ;
MAYER, TM ;
KELLERMAN, BK ;
MCILROY, DT ;
HOWARD, AJ .
PHYSICAL REVIEW LETTERS, 1994, 72 (19) :3040-3043
[7]   Surface morphology of Ge(001) during etching by low-energy ions [J].
Chey, SJ ;
VanNostrand, JE ;
Cahill, DG .
PHYSICAL REVIEW B, 1995, 52 (23) :16696-16701
[8]   SUPPRESSION OF 3-DIMENSIONAL ISLAND NUCLEATION DURING GAAS GROWTH ON SI(100) [J].
CHOI, CH ;
AI, R ;
BARNETT, SA .
PHYSICAL REVIEW LETTERS, 1991, 67 (20) :2826-2829
[9]   Spontaneous pattern formation on ion bombarded Si(001) [J].
Erlebacher, J ;
Aziz, MJ ;
Chason, E ;
Sinclair, MB ;
Floro, JA .
PHYSICAL REVIEW LETTERS, 1999, 82 (11) :2330-2333
[10]   The pattern formation during ion bombardment of Cu(001) investigated with helium atom beam scattering [J].
Ernst, HJ .
SURFACE SCIENCE, 1997, 383 (2-3) :L755-L759