π-σ-Phosphonic Acid Organic Monolayer/Sol-Gel Hafnium Oxide Hybrid Dielectrics for Low-Voltage Organic Transistors

被引：135

作者：

Acton, Orb ^{[1
]}

Ting, Guy ^{[2
]}

Ma, Hong ^{[1
]}

Ka, Jae Won ^{[1
]}

Yip, Hin-Lap ^{[1
]}

Tucker, Neil M. ^{[2
]}

Jen, Alex K. -Y. ^{[1
,2
]}

机构：

[1] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA

[2] Univ Washington, Dept Chem, Seattle, WA 98195 USA

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 19期

关键词：

D O I：

10.1002/adma.200800810

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Anthryl-alkyl-PA (pi-sigma-PA) self-assembled monolayers (SAMs)/hafnium oxide (HfO2) hybrid dielectrics have been integrated into organic thin film transistors (OTFTs) to achieve operating voltages under -1.5V. Using pi-sigma-PA SAMs on sol-gel processed HfO2, pentacene-based OTFTs possess low subthreshold slopes (100 mV dec(-1)), high on-off current ratios (10(5)-10(6)), and hole mobilities as high as 0.22 cm(2) V-(1) s(-1).

引用

页码：3697 / +

页数：6

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