Integrated cooling for Si-based microelectronics

被引：17

作者：

Fan, XF ^{[1
]}

Zeng, GH ^{[1
]}

LaBounty, C ^{[1
]}

Vashaee, D ^{[1
]}

Christofferson, J ^{[1
]}

Shakouri, A ^{[1
]}

Bowers, JE ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

TWENTIETH INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/ICT.2001.979917

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Thin film thermoelectric coolers are advantageous for their high cooling power density and their potential integrated applications. Si1-xGex is a good thermoelectric material at high temperatures and superlattice structures can further enhance the device performance. Si1-xGex and Si1-xGex/Si superlattice structures were grown on Si substrates using molecule beam epitaxy. Si1-xGex and Si1-xGex/Si superlattice thin film microcoolers with the film thickness on the order of several microns were fabricated using integrated circuit processing technology. Micro thermocouples and integrated thermistor sensors were used to characterize these coolers. Maximum cooling power density on the order of hundreds of watts per square centimeter was measured at room temperature. It is possible to monolithically integrate these coolers with Si-based microelectronic devices for localized cooling and temperature stabilization.

引用

页码：405 / 408

页数：4

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