High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared

被引：1059

作者：

Choi, Woong ^{[3
]}

Cho, Mi Yeon ^{[1
]}

Konar, Aniruddha ^{[4
]}

Lee, Jong Hak ^{[2
]}

Cha, Gi-Beom ^{[5
,6
]}

Hong, Soon Cheol ^{[5
,6
]}

Kim, Sangsig

Kim, Jeongyong ^{[7
]}

Jena, Debdeep ^{[4
]}

Joo, Jinsoo ^{[1
]}

Kim, Sunkook

机构：

[1] Korea Univ, Dept Phys, Seoul 136713, South Korea

[2] Kyung Hee Univ, Inst Laser Engn, Dept Elect & Radio Engn, Gyeonggi 446701, South Korea

[3] Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea

[4] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[5] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[6] Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 680749, South Korea

[7] Univ Incheon, Dept Phys, Inchon 406772, South Korea

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 43期

基金：

美国国家科学基金会; 新加坡国家研究基金会;

关键词：

MoS2; phototransistors; transition metal dichalcogenide; PHOTOCONDUCTIVITY; TRANSISTORS;

D O I：

10.1002/adma.201201909

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm(2)V(-1)s(-1)), near-ideal subthreshold swings (similar to 70 mV decade-1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.

引用

页码：5832 / 5836

页数：5

共 22 条

[1] Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides [J].