A highly sensitive and low-noise IR photosensor based on a-SiGe as a sensing and noise filter: Toward large-sized touch-screen LCD panels

被引：17

作者：

Han, Sang Youn ^{[1
]}

Kim, Dae Cheol ^{[2
]}

Cho, Byeonghoon ^{[2
]}

Jeon, Kyung Sook ^{[1
]}

Seo, Seung Mi ^{[1
]}

Seo, Mi Seon ^{[1
]}

Jung, Suk-Won ^{[1
]}

Jeong, Kihun ^{[2
]}

Kim, Woong Kwon ^{[2
]}

Yang, Sung-Hoon ^{[1
]}

Kim, Nam-Heon ^{[2
]}

Song, Junho ^{[2
]}

Kong, Hyang-Shik ^{[1
]}

Kim, Hyung Guel ^{[2
]}

机构：

[1] Samsung Elect, LCD R&D Ctr, Yongin 446711, Gyeonggi Do, South Korea

[2] Samsung LCD Dev Ctr, Asan, Choongchungnam, South Korea

来源：

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 2011年 / 19卷 / 12期

关键词：

Thin-film transistor; infrared photosensor; touch-screen panel; amorphous SiGe; bandpass filter; AMORPHOUS-SILICON; HIGH-PERFORMANCE; PHOTODETECTORS; TFT;

D O I：

10.1889/JSID19.12.855

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The a-SiGe TFT photosensor for embedded touch-screen panels (TSPs) was characterized by comparison with an a-Si sensor. The photoresponse of an a-SiGe sensor at a 850-nm wavelength was much higher than that of a-Si, indicating that a-SiGe is a strong candidate material for an IR sensor. In order to increase the signal-to-noise ratio, the incident visible light was filtered by incorporating a bandpass-filter layer. An a-SiGe IR-sensor-embedded LCD panel was successfully demonstrated, showing an excellent multitouch property independent of ambient-light conditions. This technology can be widely used in multifunctional TSPs.

引用

页码：855 / 860

页数：6

共 20 条

[1] Optical panel with full multitouch using patterned indium tin oxide [J].

Chang, Wen-Yang ;

Lin, Heng-Ju ;

Chang, Jin-Sheng .

OPTICS LETTERS, 2011, 36 (06) :894-896

[2] High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation [J].

Dosunmu, OI ;

Cannon, DD ;

Emsley, MK ;

Kimerling, LC ;

Ünlü, MS .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (01) :175-177

[3] Thick-layered etched-contact amorphous silicon transistors [J].

GadelRab, SM ;

Chamberlain, SG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (02) :465-471

[4] Rewritable nanoscale oxide photodetector [J].

Irvin, Patrick ;

Ma, Yanjun ;

Bogorin, Daniela F. ;

Cen, Cheng ;

Bark, Chung Wung ;

Folkman, Chad M. ;

Eom, Chang-Beom ;

Levy, Jeremy .

NATURE PHOTONICS, 2010, 4 (12) :849-852

[5] AMORPHOUS-SILICON PHOTOTRANSISTORS [J].

KANEKO, Y ;

KOIKE, N ;

TSUTSUI, K ;

TSUKADA, T .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :650-652

[6] High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform -: art. no. 103501 [J].

Liu, JF ;

Michel, J ;

Giziewicz, W ;

Pan, D ;

Wada, K ;

Cannon, DD ;

Jongthammanurak, S ;

Danielson, DT ;

Kimerling, LC ;

Chen, J ;

Ilday, FÖ ;

Kärtner, FX ;

Yasaitis, J .

APPLIED PHYSICS LETTERS, 2005, 87 (10)

[7] Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications -: art. no. 011110 [J].

Liu, JF ;

Cannon, DD ;

Wada, K ;

Ishikawa, Y ;

Jongthammanurak, S ;

Danielson, DT ;

Michel, J ;

Kimerling, LC .

APPLIED PHYSICS LETTERS, 2005, 87 (01)

[8] Large scale, highly conductive and patterned transparent films of silver nanowires on arbitrary substrates and their application in touch screens [J].

Madaria, Anuj R. ;

Kumar, Akshay ;

Zhou, Chongwu .

NANOTECHNOLOGY, 2011, 22 (24)

[9]

Michel J, 2010, NAT PHOTONICS, V4, P527, DOI [10.1038/nphoton.2010.157, 10.1038/NPHOTON.2010.157]

[10] HYDROGENATED AMORPHOUS-SILICON IMAGE SENSORS [J].

ROSAN, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (12) :2923-2927

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