Thick-layered etched-contact amorphous silicon transistors

被引：8

作者：

GadelRab, SM ^{[1
]}

Chamberlain, SG ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 02期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/16.658682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We introduce a new thick-layered, etched-contact a-Si:H TFT (TLEC-TFT) structure which allows the use of thick a-Si:H layers without increasing the TFT contact resistance. This device facilitates the integration of high-performance TFT's and thick-layered photo-transistors in a-Si:H-based image senors. The TLEC-TFT is fully compatible with the conventional TFT fabrication process and requires no extra masking steps. For low values of the drain-to-source voltage, our new TFT boosts the linear region current by two orders of magnitude over that of conventional TFT's with identically thick a-Si:H layers. By removing the adverse effects of contact resistance in transistors with thick a-Si:H layers, our TLEC-TFT design allows us to compare the performance of TFT's with thick and thin a-Si:H layers. We find that the width of the conduction-band tail decreases in thick-layered a-Si:H TFT's. This reduction in the width of the band tails results in an increase in the TFT mobility and subthreshold slope. Consequently, thick-layered, etched-contact TFT's possess higher overall current-drive capabilities compared to conventional, thin-layered TFT's. We present experimental evidence which correlates the width of the conduction-band tail to the density of as-deposited free carriers.

引用

页码：465 / 471

页数：7

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