THE EFFECTS OF METAL-N(+) INTERFACE AND SPACE-CHARGE LIMITED CONDUCTION ON THE PERFORMANCE OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS

被引：4

作者：

GADELRAB, SM

CHAMBERLAIN, SG

机构：

[1] Electrical and Computer Engineering Department, University of Waterloo, Waterloo

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 03期

关键词：

D O I：

10.1109/16.275240

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We derive a contact current density expression that accounts for both the metal-nf film interface resistance and the space charge limited conduction in amorphous silicon thin-film transistors. Our model demonstrates that the metal-nt interface behavior dominates over space charge limited conduction for the a-Si:H film thicknesses used in pixel switching.

引用

页码：462 / 464

页数：3

共 8 条

[1] CONTACT RESISTANCE TO UNDOPED AND PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON FILMS [J].