Growth, Optical, and Electrical Properties of In2S3 Zigzag Nanowires

被引：43

作者：

Datta, Anuja ^{[1
]}

Sinha, Godhuli ^{[1
]}

Panda, Subhendu K. ^{[1
]}

Patra, Amitava ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Dept Mat Sci, Kolkata 700032, India

来源：

CRYSTAL GROWTH & DESIGN | 2009年 / 9卷 / 01期

关键词：

CHEMICAL-VAPOR GROWTH; MORPHOLOGY CONTROL; BETA-IN2S3; EMISSION; NANOSTRUCTURES; LUMINESCENCE; FABRICATION; NANOBELTS;

D O I：

10.1021/cg800663t

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ultralong In2S3 zigzag nanowires (diameter similar to 66 nm) of variable periodicities are fabricated by physical vapor deposition of indium and sulfur, using Au as the catalyst element. The morphologies of the zigzag nanowires are controlled by interplay of surface free energy minimization and self-stacking of the closest-packed (103) and (00 (12) under bar) planes along their axis. The resulting zigzag nanowires show an enhanced luminescence and a rectifying behavior, which can open up avenues for a host of potential device applications.

引用

页码：427 / 431

页数：5

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