Formation of pyramids at surface of TMAH etched silicon

被引：10

作者：

Choi, WK ^{[1
]}

Thong, JTL ^{[1
]}

Luo, P ^{[1
]}

Bai, Y ^{[1
]}

Tan, CM ^{[1
]}

Chua, TH ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect Engn, Microelect Lab, Singapore 119260, Singapore

来源：

APPLIED SURFACE SCIENCE | 1999年 / 144-45卷

关键词：

etching parameters; silicon; tetramethylammonium hydroxide (TMAH); pyramids;

D O I：

10.1016/S0169-4332(98)00842-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An investigation on the influence of etchant concentration and ambient temperature on the formation of pyramids arising from the TMAH etching of silicon has been carried out. The number and size of the pyramids were used as parameters for the investigation. From the results obtained from this study, we are able to explain the influence of the TMAH concentration and ambient temperature on the changes occurring st the silicon surface satisfactorily using the pH theory. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：472 / 475

页数：4

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