ZnO quantum dots synthesized by a vapor phase transport process

被引：66

作者：

Lu, JG ^{[1
]}

Ye, ZZ

Huang, JY

Zhu, LP

Zhao, BH

Wang, ZL

Fujita, S

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[3] Kyoto Univ, Int Innovat Ctr, Nishikyo Ku, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 06期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2172154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A vapor phase transport growth process has been developed to synthesize ZnO quantum dots (QDs) on Si substrates. The characteristics were investigated for as-prepared ZnO QDs without any additional treatment. The formation of ZnO QDs with 6 nm in height and 15 nm in diameter is confirmed by scanning electron microscope and atomic force microscopy. Room-temperature photoluminescence reveals that the as-prepared ZnO QDs exhibit a predominant ultraviolet emission at 3.32 eV while the low energy defect-related blue-green emission is significantly quenched. The band gap of ZnO QDs is determined to be 3.41 eV, which evidently indicates the quantum confinement effects.

引用

页数：3

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